3.4 +0.3 -0.1 0.4 ? 0.1 |? 1 . 5 ? 0 . 1 cathode indification features ? silicon epitaxial planar diode ? high speed switching diode ? 500 mw power dissipation mechanical data ? case: mini-melf ,glass case ? polarity: color band denotes cathode ? weight: approx 0.031 grams ratings at 25 ?? ,ambient temperature unless otherwise specified. reverse voltage v r v repetitive peak reverse voltage v rrm v forward current i (av) a forward surge current t p =1s i fsm a power dissipation p v mw thermal resistance junction to ambient r ja k/w thermal resistance junction to lead r jl k/w junction temperature t j ?? storage temperature range t stg ?? 250 BAV100---bav103 maximum ratings and electrical characteristics 0.25 35 0 500 1) - 65 --- + 175 bav102 absolute maximum ratings and thermal resistance unit 200 60 50 150 bav101 100 120 small signal switching diode BAV100 1.0 175 500 bav103 200 mini-melf 1) device mounted on pc board 50mm50mm1.6mm . reverse voltage - 50 to 200 volts forward current - 250 mapere www.shunyegroup.com.cn
electrical characteristics parameter symbo l min typ max unit forward voltage v f --1v reverse current - - 100 n a --15 www.shunyegroup.com.cn
forward current ( ma ) ratings and characteristic curves differential forward resistance, reverse current ( m a ) forward current ( ma ) BAV100 - - - bav103 junction temperture ( ) forward voltage ( v ) fig 1. reverse current vs. junction temperature fig 3. differential forward resistance fig 2. forward current vs. forward voltage 0 40 80 120 160 0.01 0.1 1 10 1000 200 100 scattering limit v r =v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 2.0 scattering limit t j =25 c vs. forward current 0.1 1 10 1 10 100 1000 100 t j =25 c www.shunyegroup.com.cn
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